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SEMI S22-1103bE (editorial revision)
1 The purpose of this Specification is to define a standard equipment capability to report recipe step and process-related data to the factory system
•Sensitivity
the back surface of which may be polished or acid etched
SEMI E6-82 (first published)
MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities Revision:SEMI MF1389-1115 - Superseded SEMI S22-1103bE (editorial revision)Electronic grade polycrystalline silicon producers and users require information regarding impurities for quality assurance as well as for research and development purposes. Polysilicon is float zoned and a sample from the zoned rod is analyzed following this Test Method to obtain impurity densities that can be related to the impurity content of the starting material. Photoluminescence analysis identifies and quantifies the electrically active dopant
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